Sputter Deposition, TFE Batch Vertical PVD - Status: Available

Current Status: Available
Training: View Topics/Sessions
Use Rates:
- External Academic & Government: $76.50/Hour
- External Affiliated Commercial/Industrial: $76.50/Hour
- External Commercial/Industrial: $102.00/Hour
- External International Academic: $102.00/Hour
- Internal Standard: $51.00/Hour
In Cleanroom: No
Main Contact: Marco Downing

The TFE ITO Sputter is a dedicated sputter tool for tuning and depositing ITO with various properties. It comes with a heated RF etch station and tune-able plasma power, plasma pressure, and plasma gas composition (Ar/O2). The tool can run up to 9 4" wafers or 4 6" wafers at a time.

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The TFE ITO Sputter tool is a dedicated oxide sputter tool for high throughput wafer processing. It comes with two pallets, a 9 x 4” wafer palette and a 4 x 6” wafer palette. It has three targets, two DC/Pulsed DC and one DC/Pulsed DC/RF. Currently, only the DC/Pulsed DC/RF target (T3) is loaded with ITO. T1 and T2 has stainless steel targets for conditioning/testing. The tool is also equipped with an etch station, which can do DC or RF plasma of Ar or O2. The etch station is also equipped with substrate heaters up to 350C. For processing the tool can sputter with Ar or Ar/O2 plasma with tuning parameters such as chamber pressure, %O2, plasma power, scan speed, #’s of scans, and pre-deposition etch/heating. The tool can operate in either fixed position mode, or scanning mode, with scanning mode providing significantly better uniformity. Deposition rates of ITO of 40nm/min can be easily achieved.

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